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CM50TL-24NF Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM50TL-24NF
Description  IGBT MODULES HIGH POWER SWITCHING USE
PDF  5 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM50TL-24NF Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb. 2009
4
MITSUBISHI IGBT MODULES
CM50TL-24NF
HIGH POWER SWITCHING USE
100
101
23
5
7
102
23
5
7
101
102
2
3
5
7
103
2
3
5
7
trr
Irr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
Conditions:
VCC = 600V
VGE =
±15V
RG = 6.3
Ω
Tj = 25
°C
Inductive load
10–3
101
100
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
23 5 7
23 5 7
Single Pulse,
TC = 25
°C
Under the chip
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
TIME (s)
IGBT part:
Per unit base =
Rth(j–c) = 0.32
K/W
FWDi part:
Per unit base =
Rth(j–c) = 0.43
K/W
10–1
2
3
5
7
2
3
5
7
100
101
57
102
23
5
7
23
RECOVERY LOSS vs. IE
(TYPICAL)
EMITTER CURRENT IE (A)
Conditions:
VCC = 600V
VGE =
±15V
RG = 6.3
Ω
Tj = 125
°C
Inductive load
C snubber at bus
Err
101
100
10–1
2
3
5
7
2
3
5
7
100
101
57
102
23
5
7
23
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT IC (A)
Conditions:
VCC = 600V
VGE =
±15V
RG = 6.3
Ω
Tj = 125
°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
GATE RESISTANCE RG (
Ω)
102
101
100
Conditions:
VCC = 600V
VGE =
±15V
IC = 50A
Tj = 125
°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
2
3
5
7
2
3
5
7
100
101
57
102
23
5
7
23
102
101
100
2
3
5
7
2
3
5
7
100
101
57
102
23
5
7
23
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
GATE RESISTANCE RG (
Ω)
Conditions:
VCC = 600V
VGE =
±15V
IE = 50A
Tj = 125
°C
Inductive load
C snubber at bus
Err



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