TPCP8510 datasheet(2/5 Pages) TOSHIBA

Part #	TPCP8510

Description	Transistor Silicon NPN Epitaxial Type

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

TPCP8510

2009-07-14

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 180 V, IE = 0

―

100

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

100

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IB = 0

180

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

120

―

hFE (1)

VCE = 2 V, IC = 0.1 A

120

―

300

DC current gain

hFE (2)

VCE = 2 V, IC = 0.3 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 0.3 A, IB = 0.01 A

―

0.14

Base-emitter saturation voltage

VBE (sat)

IC = 0.3 A, IB = 0.01 A

―

1.1

Rise time

―

0.1

―

Storage time

tstg

―

1.5

―

Switching time

Fall time

See Figure 3 circuit diagram

VCC ≈ 72 V, RL = 240 Ω

IB1 = IB2 = 10 mA

―

0.2

―

μs

Figure 3. Switching Time Test Circuit

Duty cycle＜1%

Output

IB1

IB2

Input

VCC

IB1

μs

IB2

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