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MMBD4448HT Datasheet(PDF) 2 Page - Weitron Technology |
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MMBD4448HT Datasheet(HTML) 2 Page - Weitron Technology |
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2 / 3 page ![]() Maximum Ratings (TA=25°C Unless otherwise noted) Characteristic Symbol VRRM VRRM IFM IFSM VR Pd Value Unit 80 500 4.0 2.0 150 -65 to + 150 Electrical Characteristics (TA=25˚C Unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage IR=2.5µA Forward Voltage IF=5mA IF=10mA IF=100mA IF=150mA Total Capacitance VR=6V, f=1.0MHz Reverse Current VR=70V VR=20V V(BR)R VF CT IR Min Max Unit 80 620 - - - - 720 855 1000 1250 3.5 0.1 0.025 mV V pF µA Reverse Recover Time VR=6V, IF=5mA Trr 4.0 nS Device Marking Item Marking Eqivalent Circuit diagram 1 3 1 2 3 1 2 3 MMBD4448HT MMBD4448HTC MMBD4448HTS MMBD4448HTA A3 A7 AB A6 1 2 3 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current Power Dissipation Storage Temperature Range Junction Temperature Range Tj TSTG V mA IO 250 mA VRM 100 Non-Repetitve Peak Reverse Voltage Average Rectied Output Current V A mW °C °C WEITRON http://www.weitron.com.tw 2/3 31-May-07 MMBD4448HT/HTA HTC/HTS Thermal Resistance RθJA °C/W 833 @t=1.0µS @t=1.0S +150 |
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