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MBR150 Datasheet(PDF) 3 Page - Motorola, Inc |
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MBR150 Datasheet(HTML) 3 Page - Motorola, Inc |
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3 / 4 page ![]() MBR150 MBR160 3 Rectifier Device Data Figure 5. Steady–State Thermal Resistance Figure 6. Typical Capacitance 3/4 0 L, LEAD LENGTH (INCHES) 90 80 60 70 50 VR, REVERSE VOLTAGE (VOLTS) 50 80 0 60 40 30 20 40 30 20 3/8 1/8 1/4 1/2 5/8 7/8 1.0 60 70 10 20 30 40 50 70 80 10 100 200 BOTH LEADS TO HEAT SINK, EQUAL LENGTH MAXIMUM TYPICAL 100 90 TJ = 25°C f = 1 MHz NOTE 3 — MOUNTING DATA: Data shown for thermal resistance junction–to–ambient (R θJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. Typical Values for R θJA in Still Air Mounting Lead Length, L (in) R θJA g Method 1/8 1/4 1/2 3/4 R θJA 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 — 50 °C/W NOTE 4 — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) TA(A) TA(K) TL(A) TC(A) TJ TC(K) TL(K) PD R θS(A) R θL(A) R θJ(A) R θJ(K) R θL(K) R θS(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature R θS = Thermal Resistance, Heat Sink to Ambient R θL = Thermal Resistance, Lead to Heat Sink R θJ = Thermal Resistance, Junction to Case PD = Power Dissipation Mounting Method 1 P.C. Board with 1–1/2 ″ x 1–1/2″ copper surface. Mounting Method 3 P.C. Board with 1–1/2 ″ x 1–1/2″ copper surface. BOARD GROUND PLANE VECTOR PIN MOUNTING Mounting Method 2 LL LL L = 3/8 ″ (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: R θL = 100°C/W/in typically and 120°C/W/in maximum. R θJ = 36°C/W typically and 46°C/W maximum. NOTE 5 — HIGH FREQUENCY OPERATION: Since current flow in a Schottky rectifier is the result of ma- jority carrier conduction, it is not subject to junction diode for- ward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectifica- tion would yield 0.406 for sine wave inputs. However, in con- trast to ordinary junction diodes, the loss in waveform effi- ciency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. |
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