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BUR52 Datasheet(PDF) 3 Page - Comset Semiconductor |
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BUR52 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page  BUR52 COMSET SEMICONDUCTORS 3/4 Symbol Ratings Test Condition(s) Min Typ Mx Unit VCE = 4 V ; IC = 5 A 20 - 100 hFE DC Current Gain (*) VCE = 4 V ; IC = 40 A 15 - - - Is/b Second Breakdown Collector Current VCE = 20 V ; t = 1 s 17.5 - - A fT Transition - Frequency VCE = 5 V ; IC = 1 A ; f = 1 MHz - 10 16 MHz ton Turn-on time VCC = 100 V ; IC = 40 A ; IB1 = 4 A - 0.3 1 µs ts Storage Time - 1.2 2 ff Fall Time VCC = 100 V ; IC = 40 A IB1= 4 A ; IB2 = -4 A - 0.2 0.6 µs Clamped Es/b Collector Current Vclamp = 250 V ; L = 500 µH 40 - - A (*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 % |
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