CHA5093TCF

Ref. : DSCHA50932035 - 04-Feb.-02

1/6

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

24-26GHz High Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The packaged monolithic microwave IC

(MMIC)

is

a

high

gain

three-stage

monolithic

high

power

amplifier.

It

is

designed for a wide range of applications,

from military to commercial communication

systems.

The circuit is manufactured with a PM-

HEMT process, 0.25µm gate length, via

holes through the substrate, air bridges and

electron

beam

gate

lithography.

It

is

supplied in a new SMD leadless chip

carrier.

Main Features

■ Performances: 24-26GHz

■ Gain = 19dB (typical)

■ SMD leadless package

■ Dimensions: 6.35 x 6.35 x 0.97 mm

3

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors.

It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on

the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN