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VG36648041CT Datasheet(PDF) 49 Page - Vanguard International Semiconductor |
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VG36648041CT Datasheet(HTML) 49 Page - Vanguard International Semiconductor |
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49 / 70 page  Document : 1G5-0153 Rev.1 Page 49 VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Row Write (Interleaving Banks) (2 of 2) CLK CKE CS RAS CAS WE BS A10 ADD DQM DQ t CK Burst Length=8, CAS Latency=3 Activate Bank A Command Write Hi-Z Command QAa7 QBa0 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 Bank A Activate Command Bank B QAb2 QAb1 Activate Command Bank A QBa2 QBa3 QBa4 QBa5 QBa6 QBa1 Write Command Bank B RBa t RCD t RP High t DPL t DPL QBb7 QAb0 QAb3 Write Command Bank A Precharge Command Bank A Precharge Command Bank B (Bank D) (Bank D) (Bank D) |
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