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APTC60AM24SCTG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTC60AM24SCTG Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTC60AM24SCTG www.microsemi.com 1 – 7 NTC2 OUT VBUS NTC1 0/VBU S Q1 G1 Q2 S1 S2 G2 NTC2 S1 OUT OUT NTC1 VBUS 0/VBUS G2 S2 G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 95 ID Continuous Drain Current Tc = 80°C 70 IDM Pulsed Drain current 260 A VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 24 m Ω PD Maximum Power Dissipation Tc = 25°C 462 W IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 EAS Single Pulse Avalanche Energy 1900 mJ Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C |
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