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APTC60AM45T1G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTC60AM45T1G
Description  Phase leg Super Junction MOSFET Power Module
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60AM45T1G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTC60AM45T1G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 24.5A
40
45
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7.2
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
8.5
nF
Qg
Total gate Charge
150
Qgs
Gate – Source Charge
34
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 49A
51
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5Ω
45
ns
Eon
Turn-on Switching Energy
675
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
520
µJ
Eon
Turn-on Switching Energy
1100
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
635
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
49
IS
Continuous Source current
(Body diode)
Tc = 80°C
38
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 49A
1.2
V
dv/dt
Peak Diode Recovery
4
V/ns
trr
Reverse Recovery Time
Tj = 25°C
600
ns
Qrr
Reverse Recovery Charge
IS = - 49A
VR = 350V
diS/dt = 100A/µs
Tj = 25°C
17
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 49A
di/dt
≤ 100A/µs
VR ≤ VDSS
Tj ≤ 150°C



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