APTM60H23FT1G datasheet(2/5 Pages) MICROSEMI

2 / 5 page

APTM60H23FT1G

www.microsemi.com

2 – 5

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tj = 25°C

250

IDSS

Zero Gate Voltage Drain Current

VDS = 600V

VGS = 0V

Tj = 125°C

1000

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 17A

190

230

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 1mA

IGSS

Gate – Source Leakage Current

VGS = ±30 V

±100

Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

5316

Coss

Output Capacitance

610

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

Total gate Charge

165

Qgs

Gate – Source Charge

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 300V

ID = 17A

Td(on)

Turn-on Delay Time

Rise Time

Td(off)

Turn-off Delay Time

115

Fall Time

Resistive switching @ 25°C

VGS = 15V

VBus = 400V

ID = 17A

RG = 4.7Ω

Source - Drain diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

Continuous Source current

(Body diode)

Tc = 80°C

VSD

Diode Forward Voltage

VGS = 0V, IS = - 17A

dv/dt

Peak Diode Recovery

V/ns

Tj = 25°C

200

trr

Reverse Recovery Time

Tj = 125°C

370

Tj = 25°C

0.76

Qrr

Reverse Recovery Charge

IS = - 17A

VR = 100V

diS/dt = 100A/µs

Tj = 125°C

1.91

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 17A

di/dt

≤ 1000A/µs

VDD ≤ 400V

Tj ≤ 125°C

APTM60H23FT1G Datasheet(PDF) 2 Page - Microsemi Corporation

APTM60H23FT1G Datasheet(HTML) 2 Page - Microsemi Corporation

Html Pages

1 2 3 4 5

Datasheet Download

Link URL