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APTM100UM65SCAVG Datasheet(PDF) 7 Page - Microsemi Corporation

Part # APTM100UM65SCAVG
Description  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100UM65SCAVG Datasheet(HTML) 7 Page - Microsemi Corporation

  APTM100UM65SCAVG Datasheet HTML 1Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 2Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 3Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 4Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 5Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 6Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 7Page - Microsemi Corporation APTM100UM65SCAVG Datasheet HTML 8Page - Microsemi Corporation  
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APTM100UM65SCAVG
www.microsemi.com
7 – 8
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
50
94
138
182
226
270
ID, Drain Current (A)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
50
94
138
182
226
270
ID, Drain Current (A)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
50
94
138
182
226
270
ID, Drain Current (A)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
Eon
Eoff
2
6
10
14
18
22
26
01
234567
8
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=670V
ID=145A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
15
35
55
75
95
115
135
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=0.75Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage



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