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APTM100UM65SCAVG Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTM100UM65SCAVG
Description  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100UM65SCAVG Datasheet(HTML) 2 Page - Microsemi Corporation

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APTM100UM65SCAVG
www.microsemi.com
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Absolute maximum ratings
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
400
µA
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
2
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72.5A
65
78
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.5
Coss
Output Capacitance
5.08
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.9
nF
Qg
Total gate Charge
1068
Qgs
Gate – Source Charge
136
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 145A
692
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
14
Td(off)
Turn-off Delay Time
140
Tf
Fall Time
VGS = 15V
VBus = 670V
ID = 145A
RG = 0.75Ω
55
ns
Eon
Turn-on Switching Energy
2.9
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
2.9
mJ
Eon
Turn-on Switching Energy
4.8
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
3.9
mJ
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
145
ID
Continuous Drain Current
Tc = 80°C
110
IDM
Pulsed Drain current
580
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
78
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
3250
W
IAR
Avalanche current (repetitive and non repetitive)
30
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ



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