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SSM28G45EM Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM28G45EM
Description  N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
PDF  4 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM28G45EM Datasheet(HTML) 2 Page - Silicon Standard Corp.

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SSM28G45EM
9/21/2004 Rev.2.01
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Collector Current vs.
Fig 4. Collector- Emitter Saturation Voltage
Gate-Emitter Voltage
vs. Junction Temperature
Fig 5. Gate Threshold Voltage
Fig 6. Collector Current vs.
vs. Junction Temperature
Gate-Emitter Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50
0
50
100
150
Junction Temperature (
o C )
1
3
5
7
9
0
20
40
60
80
100
120
140
160
Junction Temperature (
o C)
V GE =4.0V
I C =120A
I C =50A
I C =100A
I C =130A
0
20
40
60
80
100
120
140
01234567
V CE , Collector-Emitter Voltage (V)
T A = 150
o C
5.0V
4.0V
3.3 V
2.0V
V G =1.0V
0
40
80
120
160
200
240
02
468
10
12
V CE , Collector-Emitter Voltage (V)
T A =25
o C
5.0V
4.0V
3.3V
2.0V
V G =1.0V
0
2
4
6
8
10
0123456
V GE , Gate-Emitter Voltage(V)
I C = 130 A
120A
100A
50A
T A =25
o C
0
40
80
120
160
200
240
01
234
56
V GE , Gate-Emitter Voltage (V)
V CE =6.0V
25
o C
70
o C
125
o C
T A =150
o C



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