HAL810 datasheet(30/30 Pages) MICRONAS

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HAL810

DATA SHEET

Feb. 6, 2009; DSH000034_003EN

Micronas

Micronas GmbH

Hans-Bunte-Strasse 19

⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany

Tel. +49-761-517-0

⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com

6. Data Sheet History

1. Data Sheet: “HAL 810 Programmable Linear Hall

Effect Sensor”, Aug. 16, 2002, 6251-536-1DS. First

release of the data sheet.

2. Data Sheet: “HAL 810 Programmable Linear Hall

Effect Sensor”, Nov. 22, 2002, 6251-536-2DS. Sec-

ond release of the data sheet. Major changes:

– Fig. 2–3: Diagram “Details of EEPROM and Digital

Signal Processing” changed

– Fig. 2–5: Diagram “Example for output characteris-

tics” changed

– DCOQ register programmable from

−100% to 100%

in steps of 0.0976%

– Clamping function: minimum duty cycle programma-

ble between 0% and 50% in steps of 0.0488%, max-

imum duty cycle programmable between 0% and

100% in steps of 0.0488%

– Changes in Register Information.

3. Data Sheet: “HAL 810 Programmable Linear Hall

Effect Sensor”, June 24, 2004, 6251-536-3DS. Third

release of the data sheet. Major changes:

– new package diagram for TO92UT-1

– package diagram for TO92UT-2 added

– ammopack diagrams for TO92UT-1/-2 added

– Section 4.2. "Measurement of a PWM Output Sig-

nal" added

4. Data Sheet: “HAL810 Programmable Linear Hall-

Effect Sensor”, Feb. 6, 2009, DSH000034_003EN.

Fourth release of the data sheet. Major changes:

– Section 3.1. "Outline Dimensions" updated

– Section 3.3. "Positions of Sensitive Areas" updated

– Section 3.5. "Recommended Operating Conditions"

updated

– Section 3.6. "Characteristics" updated

– Section 4.1. "Application Circuit" updated

– Section 4.5. "Ambient Temperature" updated

5. Data Sheet: “HAL 810 Programmable Linear Hall-

Effect Sensor”, Feb. 6, 2009, DSH000034_003EN.

Fifth release of the data sheet. Major changes:

– package outline dimension diagram updated.

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