PMD9050D datasheet(7/13 Pages) NXP

7 / 13 page

PMD9050D_1

Product data sheet

Rev. 01 — 27 November 2006

7 of 13

NXP Semiconductors

PMD9050D

MOSFET driver

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 4.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 5.

TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

VCE =5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 6.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

Fig 7.

TR1 (NPN): Base-emitter saturation voltage as a

function of collector current; typical values

006aaa912

200

300

100

400

500

hFE

IC (mA)

10−1

103

102

110

(2)

(3)

(1)

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VCE (V)

0.04

0.12

0.20

0.16

0.08

(A)

IB (mA) = 5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

006aaa914

0.7

0.5

0.9

1.1

VBE

(V)

0.3

IC (mA)

10−2

103

102

10−1

(2)

(3)

(1)

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0.8

0.6

1.0

1.2

VBEsat

(V)

0.4

IC (mA)

10−1

103

102

110

(2)

(3)

(1)

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