PMD9050D datasheet(8/13 Pages) NXP

8 / 13 page

PMD9050D_1

Product data sheet

Rev. 01 — 27 November 2006

8 of 13

NXP Semiconductors

PMD9050D

MOSFET driver

Test information

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

(1) IC/IB = 100

(2) IC/IB =50

(3) IC/IB =10

Fig 8.

TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

Fig 9.

TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

006aaa916

IC (mA)

10−1

103

102

110

10−1

VCEsat

(V)

10−2

(2)

(3)

(1)

006aaa917

IC (mA)

10−1

103

102

110

10−1

VCEsat

(V)

10−2

(2)

(3)

(1)

IC = 0.05 A; IBon = 2.5 mA; IBoff = −2.5 mA; R1 = 50 Ω; R2 = 1 kΩ; R3 = 1 kΩ; R4 = 1 kΩ;

RB = 1.5 kΩ; RC = 150 Ω

Fig 10. Test circuit for switching times per TR1

006aaa918

4.5 k

Ω

DUT

VCC

VBB

TR1

TR2

TR3

oscilloscope

1.5 k

Ω

(probe)

oscilloscope

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