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TPC8018 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8018 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page ![]() TPC8018-H 2006-11-16 4 Drain-source voltage VDS (V) ID – VDS Drain current ID (A) RDS (ON) – ID 1 0.1 1 10 10 100 VGS = 10 V 100 4.5 Common source Ta = 25°C Pulse test Drain current ID (A) ⎪Yfs⎪ – ID 0.1 100 1000 0.1 1 25 100 Ta = −55°C 10 10 1 Common source VDS = 10 V Pulse test Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS 0 0 1 2 3 6 20 50 Ta = −55°C 25 100 30 40 10 4 5 Common source VDS = 10 V Pulse test Gate-source voltage VGS (V) VDS – VGS 40 30 20 10 0 50 0 0.8 2 VGS = 2.8V 3.4 3.6 4 6 10 4.5 5 1.6 1.2 0.4 3 3.1 3.2 3.3 3.8 3.5 Common source Ta = 25°C Pulse test 20 12 8 0 16 4 0 0.2 0.4 0.6 0.8 VGS = 2.8V 2.9 3.1 3 6 3.5 8 10 1 3.3 3.2 4 4.5 Common source Ta = 25°C Pulse test 0 0.12 0.16 0.2 0 ID = 18 A 2 4 6 8 10 4.5 9 0.08 0.04 Common source Ta = 25°C Pulse test 100 |
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