TPC8018-H

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPC8018-H

High-Speed and High-Efficiency DC/DC Converter

Applications

Notebook PC Applications

Portable-Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching

= 25°C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

18

Drain current

Pulsed (Note 1)

72

A

Drain power dissipation

(t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.0

W

Single-pulse avalanche energy

(Note 3)

210

mJ

Avalanche current

18

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.19

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.085 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4