NTMFS4897NF

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

1.3

°C/W

Junction−to−Ambient – Steady State (Note 1)

45.7

Junction−to−Ambient – Steady State (Note 2)

132.1

Junction−to−Ambient − t v 10 sec

17.2

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

28.5

mV/°C

Zero Gate Voltage Drain Current

60

500

mA

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.0

2.5

V

Negative Threshold Temperature Coefficient

4

mV/°C

Drain−to−Source On Resistance

1.3

2.0

mW

1.3

2.0

3.0

2.0

Forward Transconductance

90

S

CHARGES AND CAPACITANCES

Input Capacitance

5660

pF

Output Capacitance

1150

Reverse Transfer Capacitance

495

Total Gate Charge

40.2

nC

Threshold Gate Charge

6.4

Gate−to−Source Charge

15.3

Gate−to−Drain Charge

13.4

Total Gate Charge

83.6

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

26

ns

Rise Time

24

Turn−Off Delay Time

36

Fall Time

13

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.