FS10ASJ-06 datasheet(1/4 Pages) MITSUBISHI

Part #	FS10ASJ-06

Description	HIGH-SPEED SWITCHING USE

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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1 / 4 page

Jan.1999

FS10ASJ-06

OUTLINE DRAWING

Dimensions in mm

MP-3

MITSUBISHI Nch POWER MOSFET

FS10ASJ-06

HIGH-SPEED SWITCHING USE

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

V

A

W

°C

g

60

±20

10

40

10

40

30

–55 ~ +150

0.26

VGS = 0V

VDS = 0V

L = 100

µH

Typical value

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Symbol

MAXIMUM RATINGS (Tc = 25

°C)

Parameter

Conditions

Ratings

Unit

¡4V DRIVE

¡VDSS ................................................................................. 60V

¡rDS (ON) (MAX) ............................................................. 70m

Ω

¡ID ........................................................................................ 10A

¡Integrated Fast Recovery Diode (TYP.) ............ 55ns

6.5

2.3

0.9MAX.

2.3

1.0

0.5

± 0.1

0.5

± 0.2

0.8

5.0

± 0.2

A

q GATE

w DRAIN

e SOURCE

r DRAIN

wr

q

qwe

r

e

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