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FS10ASJ-06 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # FS10ASJ-06
Description  HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS10ASJ-06 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

  FS10ASJ-06 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor FS10ASJ-06 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor FS10ASJ-06 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor FS10ASJ-06 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Jan.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
100
35 7
2
101
35 7
2
102
32 3
57
VGS = 4V
Tc = 25
°C
Pulse Test
10V
102
3
5
7
103
2
3
5
7
104
2
3
2
5
7
100 2101
35 7
35 7
2
102
35 7
2 3
2
Ciss
Coss
Crss
Tch = 25
°C
f = 1MHZ
VGS = 0V
100
101
23 4 5 7
102
23 4 5 7
100
101
2
3
4
5
7
102
2
3
4
5
7
td(off)
td(on)
tr
Tch = 25
°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50
Ω
tf
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
0
8
16
24
32
40
02468
10
Tc = 25
°C
VDS = 10V
Pulse Test
100
101
23 4 5 7
102
23 4 5 7
100
101
2
3
4
5
7
102
2
3
4
5
7
VDS = 5V
Pulse Test
125
°C
75
°C
TC = 25
°C
0
0.4
0.8
1.2
1.6
2.0
02468
10
ID = 15A
Tc = 25
°C
Pulse Test
10A
5A



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