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S2N7002K Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # S2N7002K
Description  115mA, 60V N-Channel Enhancement Mode Power MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

S2N7002K Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
S2N7002K
115mA, 60V
N-Channel Enhancement Mode Power MOSFET
08-Mar-2010 Rev. B
Page 1 of 3
1
2
3
GATE
SOURCE
DRAIN
*
* Gate
Pretection
Diode
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
FEATURES
Low on resistance.
Fast switching speed.
Low-voltage drive.
Easily designed drive circuits.
Easy to parallel.
Pb-Free package is available.
ESD protected:2000V
DEVICE MARKING: RK
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain – Source Voltage
VDSS
60
V
Gate – Source Voltage
VGSS
±20
V
Continuous
ID
115
mA
Drain Current
Pulsed
IDP
1
0.8
A
Continuous
IDR
115
mA
Drain Reverse Current
Pulsed
IDRP
1
0.8
A
Total Power Dissipation
PD
2
225
mW
Channel & Storage Temperature
TCH, TSTG
150, -55~150
°C
Note: 1. Pulse width ≦10
µS, Duty cycle≦1%.
2. When mounted on 1x0.75x0.062 inch glass epoxy board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
Gate-Source Leakage Current
IGSS
-
-
±10
µA
VGS=±20V, VDS=0V
Drain-Source Breakdown Voltage
V(BR)DSS
60
-
-
V
VGS=0V, ID =10
µA
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
VDS=60V, VGS=0V
Gate Threshold Voltage
VGS(TH)
1
1.85
2.5
V
VDS= VGS, ID =250
µA
-
-
7.5
VGS=10V, ID=0.5A
Drain-Source On-State Resistance*
RDS(ON) *
-
-
7.5
VGS=5V, ID=0.05A
Forward Transfer Admittance
|YFS|*
80
-
-
mS
VDS=10V, ID=0.2A
Input Capacitance
CISS
-
25
50
Output Capacitance
COSS
-
10
25
Reverse Transfer Capacitance
CRSS
-
3.0
5.0
pF
VDS=25V
VGS=0V
f=1MHz
Turn-on Delay Time
Td(ON) *
-
12
20
Turn-off Delay Time
Td(OFF) *
-
20
30
nS
VDD≒30V, V Gs=10V
I D=200mA, RL=150 , RGS=10
* Pulse width ≦300
µS, Duty cycle≦1%
SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT
SOT-23
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.04
G
-
0.18
B
2.10
2.80
H
0.40
0.60
C
1.20
1.60
J
0.08
0.20
D
0.89
1.40
K
0.6 REF.
E
1.78
2.04
L
0.85
1.15
F
0.30
0.50
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3


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