HT2DC20S20 datasheet(9/16 Pages) NXP

9 / 16 page

2001 Oct 01

Philips Semiconductors

Product speciﬁcation

HITAG 2 stick transponder

HT2DC20S20

LIMITING VALUES

All values are in accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Resistivity against magnetic pulses.

ELECTRICAL CHARACTERISTICS

Period time T0 =8 µs (f0 = 125 kHz); note 1.

Notes

1. All parameters are characterized with the SCEMTEC test equipment (STM-1) available from SCEMTEC,

Reichshof-Wenrath, Germany. All parameters are guaranteed within the temperature range of Tamb = −40 to +85 °C.

2. Maximum available field strength of the test equipment. Transponder limit has not been characterized.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

number of erase/write cycles of EEPROM

100000

−

tD(ret)

data retention time of EEPROM

Tamb =55 °C10

−

years

Toper

operating temperature

−40

+85

°C

Tstg

storage temperature

−55

+125

°C

magnetic ﬂux density

note 1

−

0.2

vibration acceleration

10 to 2000 Hz; 3 axis;

IEC 68-2-6; Test Fc

−

shock acceleration

3 axis; IEC 68-2-27;

Test Ea

−

1500

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

resonant frequency

121

125

129

kHz

bandwidth

2.3

−−

kHz

BTHR(p-p)

magnetic ﬂux density for data transmission

from transponder (peak-to-peak value)

f0 = 125 kHz

−

400(2)

µT

BPRG(p-p)

magnetic ﬂux density for programming the

EEPROM (peak-to-peak value)

f0 = 125 kHz; m = 0.95;

tLOW =8T0

−

400(2)

µT

BAUTH(p-p)

magnetic ﬂux density for mutual

authentication (peak-to-peak value)

f0 = 125 kHz; m = 0.95;

tLOW =8T0

−

400(2)

µT

BREAD(p-p)

ﬁeld absorption due to the modulation of the

transponder (peak-to-peak value)

f0 = 125 kHz;

Bﬁeld =35 µT (p-p)

−−µT

MIPRG

modulation index (m) of the base station for

programming and authentication

f0 = 125 kHz;

Bﬁeld =35 µT (p-p);

tLOW =8T0; see Fig.3

−

100

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