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TDF8591TH Datasheet(PDF) 26 Page - NXP Semiconductors |
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TDF8591TH Datasheet(HTML) 26 Page - NXP Semiconductors |
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26 / 34 page ![]() TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 26 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier (1) ripple on VDD only. (2) ripple in antiphase. (3) ripple on VSS only. (4) ripple in phase. (1) ripple on VSS only. (2) ripple on VDD only. (3) ripple in antiphase. (4) ripple in phase. a. SE application; RL =4 Ω b. BTL application; RL =8 Ω Fig 24. Supply voltage ripple rejection as a function of frequency; Mute mode 001aah213 40 20 60 80 SVRR (dB) 0 (2) (4) (1) (3) f (kHz) 10−2 102 10 10−1 1 (2) (4) (1) (3) 001aah214 40 60 80 SVRR (dB) 20 f (kHz) 10−2 102 10 10−1 1 (1) ripple on VDD only. (2) ripple in antiphase. (3) ripple on VSS only. (4) ripple in phase. (1) ripple in phase. (2) ripple on VSS only. (3) ripple on VDD only. (4) ripple in antiphase. a. SE application; RL =4 Ω b. BTL application; RL =8 Ω Fig 25. Supply voltage ripple rejection as a function of frequency; Operating mode 001aah215 40 20 60 80 SVRR (dB) 0 (2) (4) (1) (3) f (kHz) 10−2 102 10 10−1 1 001aah216 40 60 80 SVRR (dB) 20 (1) (2) (3) (4) f (kHz) 10−2 102 10 10−1 1 |
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