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TDF8591TH Datasheet(PDF) 30 Page - NXP Semiconductors |
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TDF8591TH Datasheet(HTML) 30 Page - NXP Semiconductors |
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30 / 34 page ![]() TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 30 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier 13. Test information 13.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q100 - Stress test qualification for integrated circuits, and is suitable for use in automotive applications. a. RL =2 Ω; VP = ±28 V. b. RL =4 Ω; VP = ±29 V Fig 32. Power dissipation as a function of output power (one channel), SE application Po (W) 0 200 160 80 120 40 001aah228 20 10 30 40 P (W) 0 Po (W) 0 100 80 40 60 20 001aah229 4 8 12 P (W) 0 a. RL =4 Ω; VP = ±18 V. b. RL =4 Ω; VP = ±27 V Fig 33. Power dissipation as a function of output power, BTL application Po (W) 0 160 120 40 80 001aah230 8 4 12 16 P (W) 0 Po (W) 0 160 120 40 80 001aah231 8 12 4 16 20 P (W) 0 |
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