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STV250N55F3 Datasheet(PDF) 3 Page - STMicroelectronics |
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STV250N55F3 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STV250N55F3 Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 250 A ID Drain current (continuous) at TC = 100 °C 175 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 1000 A PTOT (2) 2. This value is rated according to Rthj-c Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C EAS (3) 3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V Single pulse avalanche energy 1 J Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.5 °C/W Rthj-pcb(1) 1. When mounted on 1 inch2 FR-4 2 oz Cu Thermal resistance junction-pcb max. 50 °C/W |
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