IPB080N03L datasheet(3/10 Pages) INFINEON

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IPP080N03L G

IPB080N03L G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1400

1900

Output capacitance

C oss

580

770

Reverse transfer capacitance

Crss

Turn-on delay time

t d(on)

4.6

Rise time

t r

3.6

Turn-off delay time

t d(off)

Fall time

t f

2.8

Gate Charge Characteristics

Gate to source charge

Q gs

4.6

Gate charge at threshold

Q g(th)

2.2

Gate to drain charge

Q gd

2.1

Switching charge

Q sw

4.5

Gate charge total

Q g

8.7

Gate plateau voltage

V plateau

3.3

Gate charge total

Q g

V DD=15 V, I D=30 A,

V GS=0 to 10 V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

7.6

Output charge

Q oss

V DD=15 V, V GS=0 V

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

350

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

0.91

1.1

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=30 A, R G=1.6 Ω

V DD=15 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 1.04

page 3

2010-01-19

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