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M48T201Y Datasheet(PDF) 26 Page - STMicroelectronics |
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M48T201Y Datasheet(HTML) 26 Page - STMicroelectronics |
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26 / 37 page ![]() Clock operation M48T201Y, M48T201V 26/37 3.13 VCC noise and negative going transients ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in Figure 12) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 12. Supply voltage protection AI00605 VCC 0.1 μF DEVICE VCC VSS |
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