T630W datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Characteristics

T630W

2/8

Doc ID 3764 Rev 3

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

Tc = 105°C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

F = 50 Hz

t = 20 ms

F = 60 Hz

t = 16.7 ms

I²tI²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state

current IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125°C

PG(AV)

Average gate power dissipation

Tj = 125°C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

Minimum IGT is guaranted at 5% of IGT max.

VD = 12 V RL = 30 Ω

I - II - III

Max.

VGT

I - II - III

Max.

1.3

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 125 °C

I - II - III

Min.

0.2

(2)

For both polarities of A2 referenced to A1

IT = 100 mA

Max.

IG = 1.2 IGT

I - III

Max.

dV/dt (2)

VD = 67 %VDRM gate open Tj = 125 °C

Min.

500

V/µs

(dI/dt)c (2) Without snubber

Tj = 125 °C

Min.

4.5

A/ms

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

(1)

For both polarities of A2 referenced to A1

ITM = 8.5 A

tp = 380 µs

Tj = 25 °C

Max.

1.4

Vt0

(1)

Threshold voltage

Tj = 125 °C

Max.

0.85

(1)

Dynamic resistance

Tj = 125 °C

Max.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

Max.

5µA

Tj = 125 °C

T630W Datasheet(PDF) 2 Page - STMicroelectronics

T630W Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL