DMN2005LP4K

Document number: DS30799 Rev. 4 - 2

1 of 4

www.diodes.com

March 2009

© Diodes Incorporated

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance

•

Very Low Gate Threshold Voltage, 0.9V Max.

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

ESD Protected Gate

•

Ultra Low Profile Package

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: DFN1006H4-3

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Finish

⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.001 grams

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±10

V

Drain Current per element (Note 1)

Continuous

Pulsed (Note 3)

200

250

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width

≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DFN1006H4-3

Pin Out Configuration

TOP VIEW

BOTTOM VIEW

ESD protected

Source

Body

Diode

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

D

S

G

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