DMN2005LP4K

Document number: DS30799 Rev. 4 - 2

2 of 4

www.diodes.com

March 2009

© Diodes Incorporated

DMN2005LP4K

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (per element) (Note 5)

Drain-Source Breakdown Voltage

20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

10

μA

Gate-Source Leakage

⎯

⎯

±5

μA

ON CHARACTERISTICS (per element) (Note 5)

Gate Threshold Voltage

0.53

⎯

0.9

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

⎯

0.9

0.85

1.2

2.4

2.5

1.5

1.7

1.7

3.5

3.5

Ω

Forward Transfer Admittance

40

⎯

⎯

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

41

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

13

⎯

pF

Reverse Transfer Capacitance

⎯

4.5

⎯

pF

Switching Time

Turn-on Time

⎯

14.2

⎯

nS

Turn-off Time

⎯

45.7

⎯

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

0

1

2

3

4

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

T = 25 C

A

o

V

= 1.0V

GS

V

= 1.2V

GS

V

= 1.4V

GS

V

= 1.6V

GS

V

=1.8V

GS

V

= 2.0V

GS

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2

GS

Reverse Drain Current vs. Source-Drain Voltage

0.001

1

0.01

0.1

T , AMBIENT TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Ambient Temperature

A

I

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current

D,