DMN3033LSD

Document number: DS31262 Rev. 7 - 2

1 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN3033LSD

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Dual N-Channel MOSFET

•

Low On-Resistance

•

22m

•

33m

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOP-8L

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.072grams (approximate)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current (Note 1)

Steady

State

6.9

5.8

A

Pulsed Drain Current (Note 3)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

2

W

Thermal Resistance, Junction to Ambient

62.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

2. No purposefully added lead.

3. Pulse width

≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOP-8L

TOP VIEW

Internal Schematic

TOP VIEW

D

2

S

2

G

2

D

1

S

1

G

1

N-Channel MOSFET

N-Channel MOSFET

S1

D2

S2

D1

G2

G1

D1

D2

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