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DMN3033LSD-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3033LSD-13
Description  DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3033LSD-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN3033LSD
Document number: DS31262 Rev. 7 - 2
2 of 6
www.diodes.com
July 2009
© Diodes Incorporated
DMN3033LSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
1
⎯
2.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
22
33
m
Ω
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.0A
Forward Transconductance
gfs
⎯
7
⎯
S
VDS =5V, ID = 6.9A
Diode Forward Voltage (Note 5)
VSD
0.5
⎯
1.2
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
725
⎯
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
114
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
92
⎯
pF
Gate Resistance
RG
⎯
0.89
⎯
Ω
VGS = 0V, VDS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Qg
⎯
6.4
13.0
⎯
nC
VGS = 4.5V, VDS = 15V, ID =5A
VGS = 10V, VDS = 15V, ID = 6.9A
Gate-Source Charge
Qgs
⎯
1.9
⎯
nC
VGS = 4.5V, VDS = 15V, ID = 6.9A
Gate-Drain Charge
Qgd
⎯
3.2
⎯
nC
VGS = 4.5V, VDS = 15V, ID = 6.9A
Turn-On Delay Time
td(on)
⎯
11
⎯
ns
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
Turn-On Rise Time
tr
⎯
7
⎯
ns
Turn-Off Delay Time
td(off)
⎯
63
⎯
ns
Turn-Off Fall Time
tf
⎯
30
⎯
ns
Notes:
5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristics
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
V
= 1.0V
GS
V
= 1.5V
GS
V
= 2.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
0
2
4
6
8
10
1.5
2
2.5
3
3.5
V
= 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A



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