DMN4800LSS

Document number: DS31736 Rev. 5 - 2

1 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN4800LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

14m

•

20m

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOP-8L

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 5

•

Ordering Information: See Page 5

•

Weight: 0.072g (approximate)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

Drain Current (Note 3)

Steady

State

9

7

A

Pulsed Drain Current (Note 4)

50

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 3)

1.46

W

Thermal Resistance, Junction to Ambient

86

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

TOP VIEW

Internal Schematic

TOP VIEW

S

D

D

G

D

D

S

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