DMN4800LSS

Document number: DS31736 Rev. 5 - 2

2 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN4800LSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.8

1.2

1.6

V

Static Drain-Source On-Resistance

⎯

11

14

14

20

m

Ω

Forward Transconductance

⎯

8

⎯

S

Diode Forward Voltage (Note 5)

⎯

0.72

0.94

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

798

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

128

⎯

pF

Reverse Transfer Capacitance

⎯

122

⎯

pF

Gate Resistance

⎯

1.37

⎯

Ω

Total Gate Charge

⎯

8.7

⎯

nC

Gate-Source Charge

⎯

1.7

⎯

Gate-Drain Charge

⎯

2.4

⎯

Turn-On Delay Time

⎯

5.03

⎯

ns

Rise Time

⎯

4.50

⎯

Turn-Off Delay Time

⎯

26.33

⎯

Fall Time

⎯

8.55

⎯

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

0.5

1

1.5

2

0

5

10

15

20

30

25

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

0

5

10

15

20

25

30

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS