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ZXMN2F34MA Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXMN2F34MA
Description  20V N-channel enhancement mode MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN2F34MA Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXMN2F34MA
Issue 3 - May 2008
2
www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
μs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at end of drain lead).
Parameter
Symbol
Limit
Unit
Drain source voltage
VDSS
20
V
Gate source voltage
VGS
±12
V
Continous Drain Current @ VGS=4.5; TA=25°C(b)
@ VGS=4.5; TA=70°C(b)
@ VGS=4.5; TA=25°C(a)
@ VGS=4.5; TA=25°C(d)
ID
5.1
4.1
4.0
8.5
A
A
A
A
Pulsed drain current(c)
IDM
19
A
Continuous source current (body diode)(b)
IS
3.1
A
Pulsed source current (body diode)(c)
ISM
19
A
Power dissipation at TA =25°C(a)
Linear derating factor
PD
1.35
10.8
W
mW/
°C
Power dissipation at TA =25°C(b)
Linear derating factor
PD
2.2
17.8
W
mW/
°C
Power dissipation at TA =25°C(d)
Linear derating factor
PD
6.6
52.9
W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to 150
°C
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
92.5
°C/W
Junction to ambient(b)
R JA
56
°C/W
Junction to lead(d)
R JL
18.9
°C/W



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