ZXMN2F34MA datasheet(4/8 Pages) DIODES

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ZXMN2F34MA

Issue 3 - May 2008

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown

voltage

V(BR)DSS

ID= 250μA, VGS=0V

Zero gate voltage drain

current

IDSS

μAV

DS= 20V, VGS=0V

Gate-Body leakage

IGSS

100

VGS=±12V, VDS=0V

Gate-Source threshold

voltage

VGS(th)

0.5

0.8

1.5

ID= 250μA, VDS=VGS

Static Drain-Source

on-state resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤2%.

RDS(on)

0.060

0.120

VGS= 4.5V, ID= 2.5A

VGS= 2.5V, ID= 1.0A

Forward

transconductance(*)(†)

gfs

7.5

VDS= 10V, ID= 2.5A

Dynamic (†)

(†) For design aid only, not subject to production testing.

Input capacitance

Ciss

277

VDS= 10V, VGS=0V

f=1MHz

Output capacitance

Coss

Reverse transfer

capacitance

Crss

Switching (‡)(†)

(‡) Switching characteristics are independent of operating junction temperature.

Turn-on-delay time

td(on)

2.65

VDD= 10V, VGS= 4.5V

ID= 1A

RG ≈ 6.0Ω

Rise time

4.2

Turn-off delay time

td(off)

9.9

Fall time

5.1

Total gate charge

2.8

VDS= 10V, VGS= 4.5V

ID= 2.5A

Gate-Source charge

Qgs

0.61

Gate Drain charge

Qgd

0.63

Source-drain diode

Diode forward voltage(*)

VSD

0.73

1.2

IS= 1.25A, VGS=0V

Reverse recovery time(†)

trr

6.5

Tj=25oC, IF=1.65A

di/dt=100A/ s

Reverse recovery charge(†) Qrr

1.4

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