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LC7536M Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LC7536M Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 10 page  No. 6089-2/10 LC7536M Parameter Symbol Conditions Ratings Unit VDD max VEE ≤ VSS < VCC < VDD VSS to VSS + 18 V Maximum supply voltage VEE max VEE ≤ VSS < VCC < VDD VSS – 18 to VSS V VCC max VEE ≤ VSS < VCC < VDD VSS to VSS + 7 V VIN max1 CL, DI, CE 0 to VCC + 0.3 V Maximum input voltage VIN max2 L5dBIN, R5dBIN, L1dBIN, R1dBIN VEE – 0.3 to VDD + 0.3 V VIN max3 S VCC – 0.3 to VDD + 0.3 V Allowable power dissipation Pd max Ta ≤ 75°C 250 mW Operating temperature Topr –30 to +75 °C Storage temperature Tstg –40 to +125 °C Specifications Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V Parameter Symbol Conditions Ratings Unit min typ max VDD VDD VCC + 4.5 16 V Supply voltage VEE VEE –16 0 V VCC VCC 4.5 5 5.5 V High-level input voltage VIH1 CL, DI, CE 0.8 VCC VCC V VIH2 S 0.8 × (VDD – VCC) + VCC VDD V Low-level input voltage VIL1 CL, DI, CE VSS 0.2 VCC V VIL2 S VCC 0.2 × (VDD – VCC) + VCC V Input voltage amplitude VIN L5dBIN, R5dBIN, L1dBIN, R1dBIN VEE VDD Vp-p Input pulse width tøW CL 1 µs Setup time tsetup CL, DI, CE 1 µs Hold time thold CL, DI, CE 1 µs Operating frequency fopg CL 500 kHz Allowable Operating Ranges at Ta = –30 to +75°C, VSS = 0 V Parameter Symbol Conditions Ratings Unit min typ max THD1 VIN = 1 Vrms, f = 1 kHz, all controls flat overall, 0.004 % Total harmonic distortion VDD – VEE = 32 V THD2 VIN = 0.1 Vrms, f = 1 kHz, all controls flat overall, 0.02 % VDD – VEE = 32 V Crosstalk CT VIN = 1 Vrms, f = 1 kHz, VDD – VEE = 32 V, –75 –60 dB All controls flat overall, Rg = 1 k Ω Output at maximum attenuation Vo min VIN = 1 V rms, f = 20 kHz, volume control set at –∞, –98 dB VDD – VEE = 32 V Output noise voltage VN All controls flat overall, Rg = 1 k Ω, IHF–A, 2 10 µV VDD – VEE = 32 V Total resistance Rvol1 The 5-dB step volume block 75 k Ω Rvol2 The 1-dB step volume block 20 k Ω L5dBIN, R5dBIN, LCT1, RCT1, LCT2, RCT2, L5dBOUT, Output off leakage current IOFF R5dBOUT, L1dBIN, R1dBIN, L1dBOUT, R1dBOUT, –10 +10 µA LVM, RVM High-level input current IIH CL, DI, CE, VIN = VCC +10 µA Low-level input current IIL CL, DI, CE, VIN = VSS –10 µA Current drain IDD VDD = 16 V 1 mA ICC VDD = 5.5 V 1 mA Electrical Characteristics at Ta = 25°C, VSS = 0 V |
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