STL150N3LLH5_09 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Electrical characteristics

STL150N3LLH5

4/12

Doc ID 14092 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

11.55

2.2

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 17.5 A

VGS= 4.5 V, ID= 17.5 A

0.0014

0.0019

0.00175

0.0024

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

5800

1147

127

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 35 A

VGS =4.5 V

(see Figure 14)

13.4

14.9

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-1.1

Ω

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=15 V, ID= 17.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

17.2

30.8

65.8

47.8

STL150N3LLH5 Datasheet(PDF) 4 Page - STMicroelectronics

STL150N3LLH5 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL