19N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-261.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 25

V

Continuous Drain Current

15.6

A

Pulsed Drain Current (Note 2)

62.4

A

Avalanche Current (Note 2)

15.6

A

Single Pulsed Avalanche Energy (Note 3)

220

mJ

Repetitive Avalanche Energy (Note 2)

5.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

TO-251/TO-252

50

W

TO-220/TO-263

62.5

W

Power Dissipation

TO-3P

178

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-251/TO-252

50

°C/W

TO-220/TO-263

62.5

°C/W

Junction to Ambient

TO-3P

40

°C/W

TO-251/TO-252

2.5

°C/W

TO-220/TO-263

2.0

°C/W

Junction to Case

TO-3P

0.7

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Breakdown Voltage Temperature

Coefficient

Referenced to 25°C

0.1

V/°C

Drain-Source Leakage Current

1

µA

Forward

100

Gate-Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

0.078

0.1

Ω

Forward Transconductance

11

S

DYNAMIC PARAMETERS

Input Capacitance

600

780

pF

Output Capacitance

165

215

pF

Reverse Transfer Capacitance

32

40

pF