UNISONIC TECHNOLOGIES CO., LTD

19N10

Power MOSFET

www.unisonic.com.tw

1 of 6

Copyright © 2009 Unisonic Technologies Co., Ltd

QW-R502-261.D

100V N-Channel MOSFET

DESCRIPTION

The UTC 100V N-Channel enhancement mode power field

effect transistors (MOSFET) are produced by UTC’s planar stripe,

DMOS technology which has been tailored especially in the

avalanche and commutation mode to minimize on-state resistance,

provide superior switching performance, and withstand high energy

pulse. They are suited for low voltage applications such as audio

amplifier, high efficiency switching DC/DC converters, and DC motor

control.

FEATURES

* Ultra low gate charge ( typical 19nC )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

19N10L-T3P-T

19N10G-T3P-T

TO-3P

G

D

S

Tube

19N10L-TA3-T

19N10G-TA3-T

TO-220

G

D

S

Tube

19N10L-TM3-T

19N10G-TM3-T

TO-251

G

D

S

Tube

19N10L-TN3-R

19N10G-TN3-R

TO-252

G

D

S

Tape Reel

19N10L-TQ2-R

19N10G-TQ2-R

TO-263

G

D

S

Tape Reel

19N10L-TQ2-T

19N10G-TQ2-T

TO-263

G

D

S

Tube