IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

7.5

9.0

S

C

iss

2800

pF

C

oss

V

GS

= 0 V, V

300

pF

C

rss

70

pF

t

d(on)

18

30

ns

t

r

V

GS

= 10 V, V

40

ns

t

d(off)

I

76 100

ns

t

f

32

60

ns

Q

g(on)

110 120

nC

Q

gs

V

GS

= 10 V, V

15

25

nC

Q

gd

40

50

nC

R

thJC

0.90 K/W

R

thCK

0.30

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

13

A

I

SM

Repetitive; pulse width limited by T

JM

52

A

V

SD

I

1.5

V

Note 1

t

rr

T

250

ns

T

350

ns

Q

RM

T

0.6

µC

T

1.25

µC

I

RM

T

A

T

A

I

-di/dt = 100 A/

µs,

V

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

I

3. See IXFH13N50 data sheet for characteristic curves.

ISOPLUS220 Outline