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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

35

55

S

C

iss

4800

pF

C

oss

V

GS

= 0 V, V

1675

pF

C

rss

590

pF

t

d(on)

50

ns

t

r

V

GS

= 10 V, V

ns

t

d(off)

I

95

ns

t

f

31

ns

Q

g(on)

180

nC

Q

gs

V

GS

= 10 V, V

42

nC

Q

gd

Notes 2

75

nC

R

thJC

0.54 K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

80

A

I

SM

Repetitive; pulse width limited by T

JM

320

A

V

SD

I

1.5

V

Note 1

t

rr

200

ns

Q

RM

0.5

µC

I

RM

6A

I

-di/dt = 100 A/

µs,

V

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFC 80N085

ISOPLUS220LV Outline

Notes:

1. Lead 1 = Gate

2. Lead 2 = Drain

3. Lead 3 = Source

4. Back surface 4 is electrically

isolated from leads 1, 2 & 3