IXFC80N085 datasheet(1/2 Pages) IXYS

Part #	IXFC80N085

Description	HiPerFET MOSFET ISOPLUS220

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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HiPerFETTM MOSFET

ISOPLUS220TM

Electrically Isolated Back Surface

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C85

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

85

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C80

A

I

L(RMS)

Lead current limit

45

A

I

DM

T

C = 25°C, pulse width limited by TJM

75

A

I

AR

T

C = 25°C

320

A

E

AR

T

C = 25°C30

mJ

E

AS

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

230

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

F

C

Mounting force

11..65/2.4..11 Nm/lb

V

ISOL

50/60 Hz, RMS

t = 1 minute leads-to-tab

2500

V~

Weight

2g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA85

V

GS(th)

V

DS = VGS, ID = 4 mA

2.0

4.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J = 25°C50

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = IT

11 m

Ω

Notes 1, 2

N-Channel Enhancement Mode

High dv/dt, Low t

rr, HDMOS

TM

Family

G = Gate,

D = Drain,

S = Source

* Patent pending

DS98851D(05/04)

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

-Isolatedmountingsurface

-2500Velectricalisolation

Lowdraintotabcapacitance(<35pF)

Low R

DS (on)

Ruggedpolysilicongatecellstructure

UnclampedInductiveSwitching(UIS)

rated

FastintrinsicRectifier

Applications

DC-DC converters

Batterychargers

Switched-modeandresonant-mode

power supplies

DC choppers

ACmotorcontrol

Advantages

Easyassembly:noscrewsorisolation

foilsrequired

Space savings

High power density

Lowcollectorcapacitancetoground

(low EMI)

IXFC 80N085

G

D

S

ISOPLUS220TM

Isolated back surface*

V

DSS

=

85 V

I

D25

=

80 A

R

DS(on) =

11 m

Ω

t

rr ≤

≤≤≤≤ 200 ns

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