IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Fig. 11. Capacitance

100

1000

10000

100000

0

5

10

15

20

25

30

35

40

V

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

50

100

150

200 250

300

350

400

450

Q

I

Fig. 7. Input Adm ittance

0

4

8

12

16

20

24

28

32

36

40

3

3.5

4

4.5

5

5.5

V

T

25ºC

-40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

90

0

8

16

24

32

40

48

56

64

I

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

10

20

30

40

50

60

70

80

90

100

0.2

0.4

0.6

0.8

1

1.2

1.4

V

T

Fig. 12. Maxim um Transient Therm al

Resistance

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

1

10

100

1000

Pulse Width - milliseconds

IXFN 32N120