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IXFN32N120 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN32N120 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2003 IXYS All rights reserved Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 3 mA 1200 V V GS(th) V DS = VGS, ID = 8 mA 2.5 5.0 V I GSS V GS(th) = ±30 VDC, VDS = 0 ±200 nA I DSS V DS = VDSS T J = 25 °C50 µA V GS = 0 V T J = 125°C3 mA R DS(on) V GS = 10 V, ID = 0.5 • ID25 0.35 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 1200 V V DGR T J = 25°C to 150°C; RGS = 1 MΩ 1200 V V GS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25 °C, Chip capability 32 A I DM T C = 25 °C, pulse width limited by T JM 128 A I AR T C = 25 °C32 A E AR T C = 25 °C64 mJ E AS T C = 25 °C4 J dv/dt I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 15 V/ns T J≤ 150°C, RG = 2 Ω P D T C= 25°C 780 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz, RMS t = 1 min 2500 V~ I ISOL ≤ 1 mA t = 1 s 3000 V~ M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.5/13 Nm/lb.in. Weight 30 g HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr DS98968B(10/03) D S G S S G S D miniBLOC, SOT-227 B (IXFN) E153432 G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source IXFN 32N120 V DSS = 1200V I D25 = 32A R DS(on) = 0.35 Ω Ω Ω Ω Ω Advanced Technical Data |
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