2.0-18.0 GHz GaAs MMIC

Buffer Amplifier

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Features

Self Bias Architecture

On-Chip Drain Bias Coil/DC Blocking

8.5 dB Small Signal Gain

4.5 dB Noise Figure

+19.0 dBm P1dB Compression Point

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Parameter

Units

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

dBm

VDC

mA

Min.

2.0

7.0

10.0

7.0

-

-

-

17.0

-

-

+4.5

100

Typ.

-

12.0

15.0

8.5

+/-0.5

25.0

4.5

+19.0

+39.0

+29.0

+5.0

115

Max.

18.0

-

-

-

-

-

7.5

-

-

-

+7.0

130

Supply Voltage (Vd)

Supply Current (Id)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

+8.5 VDC

175 mA

+20 dBm

-65 to +165 ºC

-55 to +85 ºC

+175 ºC

Chip Device Layout

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2009 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC

distributed low noise amplifier has a small signal gain

of 8.5 dB with a noise figure of 4.5 dB across the band.

This MMIC uses Mimix Broadband’s GaAs PHEMT device

model technology, and is based upon optical beam

lithography to ensure high repeatability and uniformity.

The chip has surface passivation to protect and provide

a rugged part with backside via holes and gold

metallization to allow either a conductive epoxy or

eutectic solder die attach process. This device is well

suited for fiber optic, microwave radio, military, space,

telecom infrastructure, test instrumentation and VSAT

applications.

Absolute Maximum Ratings

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Noise Figure (NF)

Output Power for 1 dB Compression (P1dB)

Output Second Order Intercept Point (OIP2)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd)

Supply Current (Id) (Vd=5.0V)

CMM4000-BD

September 2009 - Rev 21-Sep-09

100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant

with an 80% pass rate required.