IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

Note 1

45

S

C

iss

9400

pF

C

oss

V

1280

pF

C

rss

460

pF

t

d(on)

45

n s

t

r

V

60

n s

t

d(off)

R

120

n s

t

f

45

n s

Q

g(on)

330

nC

Q

gs

V

55

nC

Q

gd

155

nC

R

thJC

0.30

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

55

A

I

SM

Repetitive; pulse width limited by T

JM

220

A

V

SD

I

1.5

V

t

rr

250

n s

Q

RM

1.0

µC

I

RM

10

A

I

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFG 55N50

See IXFK55N50 data sheet for

characteristic curves.

ISO264 OUTLINE

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - No Connection