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STK401-080 Datasheet(PDF) 7 Page - Sanyo Semicon Device

Part # STK401-080
Description  3-Channel AF Power Amplifier (Split Power Supply) (15 W 15 W 15 W min, THD = 0.4 %)
PDF  10 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

STK401-080 Datasheet(HTML) 7 Page - Sanyo Semicon Device

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External Circuit Diagram
No. 4830-7/10
STK400-020
Heat Radiation Design Considerations
The radiator thermal resistance
θc-a required for total substrate power dissipation Pd in the STK400-020 is determined as
follows:
Condition 1: IC substrate temperature Tc not to exceed 125°C.
Pd x
θc-a+Ta <125°C ······························· (1)
where Ta is set assured ambient temperature.
Condition 2: Power transistor junction temperature Tj not to exceed 150°C.
Pd x
θc-a+Pd/N x θj-c+Ta<150°C·············(2)
where N is the number of power transistors and
θj-c the thermal resistance per power transistor chip.
However, power transistor power dissipation is Pd equally divided by N units.
Expressions (1) and (2) can be rewritten based on
θc-a to yield:
θc-a<(125–Ta)/Pd ······································(1)'
θc-a<(150–Ta)/Pd–θj-c/N··························(2)'
The required radiator thermal resistance will satisfy both of these expressions.
From expressions (1)' and (2)', the required radiator thermal resistance can be determined once the following
specifications are known:
Supply voltage
VCC
Load resistance
RL
Assured ambient temperature
Ta
The total substrate power dissipation when STK400-020 VCC is ±20 V and RL is 6 Ω, for a continuous sine wave signal,
is a maximum of 41 W (Fig. 1). In general, when this sort of continuous signal is used for estimation of power
dissipation, the Pd used is 1/10th of PO max (slight variation depending on safety standard).
Pd=23.5 W (1/10 PO max=during 1.5 W)



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