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TLE6209R Datasheet(PDF) 9 Page - Infineon Technologies AG |
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TLE6209R Datasheet(HTML) 9 Page - Infineon Technologies AG |
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9 / 30 page ![]() TLE 6209 R Data Sheet, Version 3.2 9 2010-09-10 2.4 Power Stages The output stages consist of a DMOS H-bridge built by two highside switches and two lowside switches. Integrated circuits protect the outputs against overcurrent and overtemperature if there is a short-circuit to ground or to the supply voltage or across the load. Positive and negative voltage spikes, which occur when switching inductive loads, are limited by integrated freewheeling diodes. 2.4.1 Charge Pump To realize the fast switching times, the charge pump, which generates the voltage necessary to switch on the n-channel D-MOS high-side switches, must be highly efficient. It requires an external capacitor C DRV which is connected to VS and the charge pump buffer input, DRV. It should be placed as close to the pins as possible. 2.4.2 Chopper Current Limitation To limit the output current, a chopper current limitation is integrated as shown in Figure 3. The current is measured by sense cells integrated in the low-side switches. As soon the current limit I L is reached, the low-side switch is switched off for a fixed time t OFF. IL and tOFF can be set by the SPI control bits 0,1, 3 and 4. current limit I L off-time t OFF time Figure 3 Chopper current limitation 2.4.3 Active Freewheeling When drivng inductive loads with PWM operation, the dissipated power can be significantly reduced by activating the transistor located parallel to the internal freewheeling diode. This is realized in the TLE 6209 R. When switching an output from L to H, the high-side switch is turned on after a certain dead-time to avoid cross currents flowing through the half bridge. |
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